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Communication Dans Un Congrès Année : 2022

Baseband TIA Design Using Inversion Coefficient MOSFET Model in CMOS 28nm

Résumé

This paper presents a design methodology to size a transimpedance amplifier for an automotive radar receiver. Based on the Enz-Krummenacher-Vittoz (EKV) MOSFET model, it presents the essential equations to develop a small-signal model featuring a limited number of parameters, which can be exploited to quickly explore the different design optimums of a circuit. Post-layout simulations are presented to validate the model and the methodology. The designed TIA presents a gain of 65 dBΩ, a bandwidth of 80 MHz, an input impedance of 74 Ω and input-referred noise of 50 yA2.Hz−1.
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Dates et versions

hal-04118703 , version 1 (06-06-2023)

Identifiants

Citer

Leo Lancon, Hugo Vallee, Gilles Montoriol, Fabien Brunelli, Thierry Taris. Baseband TIA Design Using Inversion Coefficient MOSFET Model in CMOS 28nm. 2022 20th IEEE Interregional NEWCAS Conference (NEWCAS), Jun 2022, Quebec, Canada. pp.15-19, ⟨10.1109/NEWCAS52662.2022.9842093⟩. ⟨hal-04118703⟩
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