p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver
Résumé
This article presents an alternative solution to the short circuit challenges commonly faced by ultra-fast power transistors. Specially 650V p-GaN HEMTs, where the short-circuit timing capability is very critical, and the presence of thermal runaways is very sensitive. In response to this issue, a dedicated approach to detect the short-circuit inserting an on-line monitoring gate-resistor through a dual-channel segmented CMOS Gate Driver is proposed. The short-circuit indicator under Hard Switch Fault is based on the Gate-Schottky-Barrier leakage current, which is translated on a voltage drop at the gate-source voltage. The detection circuit can be fully integrated in the IC with a low monitoring voltage. A dual-buffer IC prototype including impedance state and monitoring integrated circuit using XFAB XT018 0.18um CMOS SOI technology was performed. Parametric results show a robust and quick detection propagation delay around 580ns under VDS = 400V and VGS = 5V.
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ISPSD_2023_Yazan_2-Channel-GD-for HEMT-p-GaN_FULL PAPER-V4-HAL-V2.pdf (1.66 Mo)
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