Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nature Communications Année : 2023

Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature

Hangtian Wang
Ang Li
  • Fonction : Auteur
Peichen Wu
  • Fonction : Auteur
Jing Li
  • Fonction : Auteur
Weiran Xie
  • Fonction : Auteur
Zhimei Sun
  • Fonction : Auteur
Peng Li
Héloïse Damas
Sylvie Migot
Jaâfar Ghanbaja
Luc Moreau
Yannick Fagot-Revurat
Sébastien Petit-Watelot
Thomas Hauet
Stéphane Mangin
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Weisheng Zhao
Tianxiao Nie
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Résumé

Abstract Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (T c ) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe 4 GeTe 2 with the T c reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced T c , which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe 4 GeTe 2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.
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Dates et versions

hal-04106198 , version 1 (25-05-2023)

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Hangtian Wang, Haichang Lu, Zongxia Guo, Ang Li, Peichen Wu, et al.. Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature. Nature Communications, 2023, 14 (1), pp.2483. ⟨10.1038/s41467-023-37917-8⟩. ⟨hal-04106198⟩
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