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            <title xml:lang="ru">Низкочастотные шумы и сопротивление фотодиодов с незащищенной поверхностью на основе InAsSbP/InAs в атмосфере паров этанола</title>
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                <title xml:lang="ru">Низкочастотные шумы и сопротивление фотодиодов с незащищенной поверхностью на основе InAsSbP/InAs в атмосфере паров этанола</title>
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                <term xml:lang="en">InAs photodiodes</term>
                <term xml:lang="en">hydrocarbon sensors</term>
                <term xml:lang="en">low frequency noise</term>
                <term xml:lang="en">natural oxide on InAs surfaces</term>
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              <p>Low frequency noise and electrical characteristics of p-InAsSbP/n-InAs single heterostructures grown onto n+-InAs substrates have been measured in the presence of atmosphere containing ethanol vapor. Correlation between ethanol vapor density and electrical spectral noise density as well as the heterostructure resistance has been estimated, and possible reasons for such correlation have been discussed.</p>
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              <p>Исследованы электрические и низкочастотные шумовые характеристики одиночных фотодиодных гетероструктур p-InAsSbP/n-InAs, выращенных на подложках n + -InAs и помещенных в атмосферу, содержащую пары этанола. Выявлены взаимосвязи значения сопротивления гетероструктур и спектральной плотности токового шума с насыщенностью воздуха парами этанола и рассмотрены возможные причины такой взаимосвязи. Ключевые слова: InAs-фотодиоды, датчики углеводородов, низкочастотный шум, природный окисел на поверхности InAs, поверхностно-чувствительные структуры.</p>
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