Record RF Performance (ft=180GHz and fmax=240GHz) of a FDSOI NMOS processed within a Low Thermal Budget for 3D Sequential Integration - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2021

Record RF Performance (ft=180GHz and fmax=240GHz) of a FDSOI NMOS processed within a Low Thermal Budget for 3D Sequential Integration

Résumé

Record RF Figure-Of-Merits (FoM) is highlighted for a 42nm NMOS transistor fully processed at Low Thermal Budget (LTB) (<500°C) needed for 3D Sequential Integration (3DSI). f T =180GHz & f MAX =240GHz are reported at V DD =0.9V; which is actually very similar to performance of reference Si MOSfets processed with a Hot Thermal Budget (HTB) (Fig. 15). This excellent result was possible thanks to a careful optimization of the LTB process after an advanced characterization and modeling of key technological parameters such as mobility, Gate-Capacitance and Gate resistance

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Dates et versions

hal-04069684 , version 1 (14-04-2023)

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Paternité - Pas d'utilisation commerciale

Identifiants

  • HAL Id : hal-04069684 , version 1

Citer

Tadeu Mota Frutuoso, José Lugo-Alvarez, Xavier Garros, Laurent Brunet, Mickaël Cassé, et al.. Record RF Performance (ft=180GHz and fmax=240GHz) of a FDSOI NMOS processed within a Low Thermal Budget for 3D Sequential Integration. Symposium on VLSI Technology 2021, Jun 2021, Kyoto, Japan. ⟨hal-04069684⟩
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