SiGe quantum wells implementation in Si based nanowires for solar cells applications - Archive ouverte HAL
Article Dans Une Revue Digest Journal of Nanomaterials and Biostructures Année : 2023

SiGe quantum wells implementation in Si based nanowires for solar cells applications

Résumé

This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.
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hal-04068765 , version 1 (25-04-2023)

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M. Safi, A. Aissat, H. Guesmi, Jean-Pierre Vilcot. SiGe quantum wells implementation in Si based nanowires for solar cells applications. Digest Journal of Nanomaterials and Biostructures , 2023, 18 (1), pp.327-342. ⟨10.15251/DJNB.2023.181.327⟩. ⟨hal-04068765⟩
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