Low temperature deposition of vanadium dioxide on III–V semiconductors and integration on mid-infrared quantum cascade lasers - Archive ouverte HAL
Article Dans Une Revue AIP Advances Année : 2023

Low temperature deposition of vanadium dioxide on III–V semiconductors and integration on mid-infrared quantum cascade lasers

Résumé

We demonstrate low temperature deposition conditions for vanadium dioxide (VO 2 ) phase change material by pulsed laser deposition, which are compatible with III–V semiconductors heterostructures typically used in optoelectronic applications. The characterizations of the VO 2 coated thin films grown on GaAs show a 50% change in optical reflectivity in the mid-infrared range and a variation of electric conductivity of two orders of magnitude between the insulating (low temperature) and the metallic (high temperature) states. The transition temperature is estimated around 68 °C (341 K). We also study the functionalization of mid-infrared quantum cascade lasers (QCLs) (operating at wavelengths λ ∼ 7–8 μm) with VO 2 layers, in view of engineering the laser emission properties with an integrated VO 2 layer. We demonstrate QCLs that integrate a VO 2 layer on the surface that interacts with the guided laser mode. A maximum operating temperature of 61 °C (334 K) has been measured.

Dates et versions

hal-04062894 , version 1 (07-04-2023)

Identifiants

Citer

Laurent Boulley, Thomas Maroutian, Paul Goulain, Andrey Babichev, Anton Egorov, et al.. Low temperature deposition of vanadium dioxide on III–V semiconductors and integration on mid-infrared quantum cascade lasers. AIP Advances, 2023, 13 (1), pp.015315. ⟨10.1063/5.0111159⟩. ⟨hal-04062894⟩
17 Consultations
0 Téléchargements

Altmetric

Partager

More