Performance analysis of GaN/Si versus GaAs LNAs in 5G mm-wave frontend context - Archive ouverte HAL
Communication Dans Un Congrès Année : 2022

Performance analysis of GaN/Si versus GaAs LNAs in 5G mm-wave frontend context

Résumé

This paper presents a comparative performance analysis of LNAs realized in GaAs and GaN/Si technologies in the context of 5G mmWave massive MIMO transceiver. Regardless the choice of architecture for beamforming, a key component of the base station transmitter is the RF frontend. In this paper, we investigate the linear and nonlinear performance in a gain/noise/linearity trade-off for the LNA. The circuits are fabricated using OMMIC technologies and characterized on board over the 24-30 GHz frequency band. Measurements demonstrate that it is interesting to use a GaN in a frontend thanks to its additional advantages in terms of linearity.
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Dates et versions

hal-04051838 , version 1 (30-03-2023)

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L. Letailleur, M. Villegas, A.Al Hajjar, C.Edoua Kacou. Performance analysis of GaN/Si versus GaAs LNAs in 5G mm-wave frontend context. 2022 14th Global Symposium on Millimeter-Waves & Terahertz (GSMM), May 2022, Seoul, South Korea. pp.9-11, ⟨10.1109/GSMM53818.2022.9792324⟩. ⟨hal-04051838⟩
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