Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials Science Forum Année : 2012

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Résumé

In this paper, we deal with the study of Ultra Violet (UV) photodetector device based on SiC material undergoing a p-i-n structure process. Current density-voltage (J-V) measurements in reverse and forward bias, are performed on the UV photodetector device. Due to a very thin p + -type doping layer, a high reactivation annealing and the metallic contact deposit, experimental measurements point out Junction Barrier Schottky (JBS) device behaviour in spite of the p-i-n structure device process. To understand this involuntary phenomenon, these experimental characteristics are accompanied with an experimental study by the SIMS analysis.
Fichier non déposé

Dates et versions

hal-04050522 , version 1 (29-03-2023)

Identifiants

Citer

Stéphane Biondo, Mihai Lazar, Laurent Ottaviani, Wilfried Vervisch, Olivier Palais, et al.. Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour. Materials Science Forum, 2012, 711, pp.114-117. ⟨10.4028/www.scientific.net/MSF.711.114⟩. ⟨hal-04050522⟩
22 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More