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Article Dans Une Revue IEEE Transactions on Power Electronics Année : 2023

Quasi-Flying Gate Concept Used for Short-Circuit Detection on SiC Power MOSFETs Based on a Dual-Port Gate Driver

Mathis Picot-Digoix
Frédéric Richardeau
Jean-Marc Blaquière
Sébastien Vinnac
Stéphane Azzopardi
  • Fonction : Auteur
Thanh-Long Le

Résumé

The proposed dual-port gate driver architecture relies on a quasi-flying gate concept to protect SiC power MOSFETs against short-circuit events. Hard Switching Faults (HSF) extract charges from the gate by causing a leakage current towards the source, while Faults Under Load (FUL) lead to charge injection into the gate through the reverse transfer capacitance (Cgd). Such phenomena lead to perturbations of the gate-source voltage (Vgs) which are amplified by the gate resistor, acting as an enhancer of short-circuit signatures. Thus, a small gate resistance is used to ensure high switching dynamics, while a larger one is switched on during PWM on-state operation to identify possible faults. A dual-port gate driver is then proposed to ensure fast switching with HSF and FUL monitoring. The fault detection scheme relies on comparing two thresholds to Vgs relative changes to the nominal gate voltage. Experimental results using TO-247 package 1.2kV/36A SiC MOSFETs exhibit promising inverter leg short- circuit detection and protection against faults in less than 300ns.

Domaines

Electronique
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Dates et versions

hal-04039921 , version 1 (21-03-2023)

Identifiants

Citer

Mathis Picot-Digoix, Frédéric Richardeau, Jean-Marc Blaquière, Sébastien Vinnac, Stéphane Azzopardi, et al.. Quasi-Flying Gate Concept Used for Short-Circuit Detection on SiC Power MOSFETs Based on a Dual-Port Gate Driver. IEEE Transactions on Power Electronics, 2023, pp.1-4. ⟨10.1109/TPEL.2023.3258640⟩. ⟨hal-04039921⟩
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