Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Y. Fouzi
  • Fonction : Auteur
A. Abboud
  • Fonction : Auteur
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Dates et versions

hal-04039596 , version 1 (21-03-2023)

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  • HAL Id : hal-04039596 , version 1

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Marie Lesecq, Y. Fouzi, A. Abboud, N. Defrance, Francois Vaurette, et al.. Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate. European Materials Research Society 2022 Fall meeting, (E-MRS 2022), Sep 2022, Warsaw, Poland. ⟨hal-04039596⟩
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