[Invited] Low RF loss buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

[Invited] Low RF loss buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors

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hal-04039430 , version 1 (21-03-2023)

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  • HAL Id : hal-04039430 , version 1

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E. Frayssinet, L. Nguyen, Marie Lesecq, N. Defrance, R. Comyn, et al.. [Invited] Low RF loss buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN High Electron Mobility Transistors. 13th International Conference on Nitride Semiconductors (ICNS 2019), Jul 2019, Washington, Seattle, United States. ⟨hal-04039430⟩
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