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Communication Dans Un Congrès Année : 2019

Development of AlGaN/GaN RF HEMT technology on free-standing GaN substrate

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hal-04039402 , version 1 (21-03-2023)

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  • HAL Id : hal-04039402 , version 1

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M.R. Irekti, Marie Lesecq, N. Defrance, M. Boucherta, Eric Frayssinet, et al.. Development of AlGaN/GaN RF HEMT technology on free-standing GaN substrate. 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-04039402⟩
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