GaN-based SSD structure for THz applications
Résumé
We report on the growth optimization of GaN-based self switching diode (SSD) structure on SiC, designed using Monte Carlo simulations, for the fabrication of nano-scale SSDs to reach THz emission as a result of Gunn oscillations. Crack-free epistructure with good epi-characteristics and uniformity on 2-inch SiC substrate was achieved. High carrier density of 2×10 18 cm -3 resulted in a low contact resistance of 0.35 Ω.mm.
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