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Article Dans Une Revue Applied Physics Express Année : 2020

Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS single-atom transistor by RMS noise analysis

Résumé

Abstract We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise cryogenic CMOS transimpedance amplifier is exploited to perform low-frequency noise characterization down to the single electron, single donor and single phonon regime simultaneously, not otherwise visible through standard stability diagrams. Single electron tunneling as well as phonon-mediated features emerges in rms-noise measurements. Phonons are emitted at high frequency by generation-recombination phenomena by the impurity atom. The phonon decay is correlated to a Lorentzian 1/ f 2 noise at low frequency.

Dates et versions

hal-04033319 , version 1 (17-03-2023)

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Stefano Bigoni, Marco Tagliaferri, Dario Tamascelli, Sebastiano Strangio, Roberto Bez, et al.. Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS single-atom transistor by RMS noise analysis. Applied Physics Express, 2020, 13 (12), pp.125001. ⟨10.35848/1882-0786/abc7cf⟩. ⟨hal-04033319⟩
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