Importance of accurately measuring LDOS maps using scanning tunneling spectroscopy in materials presenting atom-dependent charge order: The case of the correlated Pb/Si(111) single atomic layer - Archive ouverte HAL
Article Dans Une Revue Physical Review B Année : 2023

Importance of accurately measuring LDOS maps using scanning tunneling spectroscopy in materials presenting atom-dependent charge order: The case of the correlated Pb/Si(111) single atomic layer

Gerbold Ménard
V. Cherkez

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hal-04024935 , version 1 (11-03-2023)

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C. Tresca, T. Bilgeri, Gerbold Ménard, V. Cherkez, R. Federicci, et al.. Importance of accurately measuring LDOS maps using scanning tunneling spectroscopy in materials presenting atom-dependent charge order: The case of the correlated Pb/Si(111) single atomic layer. Physical Review B, 2023, 107 (3), pp.035125. ⟨10.1103/PhysRevB.107.035125⟩. ⟨hal-04024935⟩
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