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Article Dans Une Revue Applied Physics Letters Année : 2022

Room temperature optically pumped GeSn microdisk lasers

Résumé

GeSn alloys are promising materials for light emitters monolithically grown on silicon. In this work, we demonstrate room temperature (RT) lasing in a GeSn hetero-structure with 17.2% of Sn. We report a threshold of 3:27MWcm2 at 305K with peak emission at 353meV. We ascribe these improvements to a higher tin concentration in the GeSn active layer with lower Sn content barriers on each side and to a better thermal dissipation provided by an adapted pedestal architecture beneath the GeSn micro-disk. This outcome is a major milestone for a fully integrated group-IV semiconductor laser on Si.
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Dates et versions

hal-04023342 , version 1 (10-03-2023)

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J. Chrétien, Q. Thai, M. Frauenrath, L. Casiez, A. Chelnokov, et al.. Room temperature optically pumped GeSn microdisk lasers. Applied Physics Letters, 2022, 120 (5), pp.051107. ⟨10.1063/5.0074478⟩. ⟨hal-04023342⟩
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