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Article Dans Une Revue Applied Physics Letters Année : 2023

Optical properties of Ga-doped AlN nanowires

Résumé

We show that intentional Ga doping of AlN nanowires in the 0.01%–0.5% range leads to the spontaneous formation of nanometric carrier localization centers. Accordingly, for single nanowires, we observed a collection of sharp cathodoluminescence lines in a wavelength range spanning from 220 to 300 nm. From temperature-dependent cathodoluminescence, a ratio between the intensity at room temperature and 5 K of 20–30% is measured. We found that an ensemble of Ga-doped AlN nanowires exhibits a wide-band cathodoluminescence emission, which opens the path to the realization of efficient UV-C light emitting diodes covering a wide part of DNA absorption band.
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Dates et versions

hal-04017194 , version 1 (10-10-2023)

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Rémy Vermeersch, Gwénolé Jacopin, Eric Robin, Julien Pernot, Bruno Gayral, et al.. Optical properties of Ga-doped AlN nanowires. Applied Physics Letters, 2023, 122 (9), pp.091106. ⟨10.1063/5.0137424⟩. ⟨hal-04017194⟩
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