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Communication Dans Un Congrès Année : 2013

Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport

Résumé

SiC Selective Epitaxial Growth (SEG) by Vapor-Liquid-Solid (VLS) transport on a bowl-shaped geometry appears to be a promising solution to perform deep, highly doped and high quality p-type doped area. Such SEG-VLS growth of highly p-doped (> 5x1019 cm-3) SiC layer was successfully demonstrated recently on large and small areas fabricated by Reactive Ion Etching (RIE). Moreover, a high quality P++(VLS)-N junction can be achieved by using this technique that offer new prospects for the achievement of new power electronics devices, including deeply buried peripheral protection zones such as guard-rings or JBS structures.
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Dates et versions

hal-04011693 , version 1 (02-03-2023)

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  • HAL Id : hal-04011693 , version 1

Citer

N Thierry-Jebali, Mihai Lazar, A Vo-Ha, D Carole, V Soulière, et al.. Influence of process parameters on electrical properties of PiN diodes fabricated with a highly p-type doped layer selectively grown by VLS transport. International Conference on Silicon Carbide and Related Materials ICSCRM 2013, Sep 2013, Miyazaki, Japan. ⟨hal-04011693⟩
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