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Article Dans Une Revue Advanced Materials Interfaces Année : 2022

Passivation of Bi$_2$Te$_3$ topological insulator by transferred CVD‐graphene: toward intermixing‐free interfaces

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The investigation, and ultimate application, of topological insulators, typically involve exposure to ambient conditions or their integration with metals, which lead to surface oxidation or material intermixing. X-ray photoelectron spectroscopy (XPS) measurements that demonstrate passivated and intermixing-free interfaces in the topological insulator Bi2Te3 by means of dry-transferred CVD graphene are reported. After air exposure, no traces of Bi2Te3 oxidation are found. Furthermore, it is demonstrated that graphene acts as a very efficient metal and chalcogen diffusion barrier in Bi2Te3/graphene/permalloy (Py) heterostructures, which are relevant for spintronics. Such results are in stark contrast with the significant surface degradation observed in bare Bi2Te3 under ambient conditions and the deep Bi-Te bonding disruption that occurs in Bi2Te3/Py heterostructures. These findings provide a new approach to control and engineer topological insulator interfaces for spintronic applications and a new platform to investigate the combined use of graphene and topological insulator Dirac states.
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hal-04006131 , version 1 (27-02-2023)

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Regina Galceran, Frédéric Bonell, Lorenzo Camosi, Guillaume Sauthier, Zewdu M Gebeyehu, et al.. Passivation of Bi$_2$Te$_3$ topological insulator by transferred CVD‐graphene: toward intermixing‐free interfaces. Advanced Materials Interfaces, 2022, 9 (36), pp.2201997. ⟨10.1002/admi.202201997⟩. ⟨hal-04006131⟩
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