Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography - Archive ouverte HAL
Article Dans Une Revue ACS Applied Materials & Interfaces Année : 2023

Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography

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Physique [physics] Sciences de l'ingénieur [physics]

Eva Monroy  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-03989809

Soumis le : mercredi 15 février 2023-09:12:09

Dernière modification le : mardi 3 septembre 2024-11:16:05

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Lou Denaix, Florian Castioni, Matthew Bryan, David Cooper, Eva Monroy. Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography. ACS Applied Materials & Interfaces, 2023, 15 (8), pp.11208-11215. ⟨10.1021/acsami.2c18813⟩. ⟨hal-03989809⟩

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