Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue ACS Applied Materials & Interfaces Année : 2023
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hal-03989809 , version 1 (15-02-2023)

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Lou Denaix, Florian Castioni, Matthew Bryan, David Cooper, Eva Monroy. Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography. ACS Applied Materials & Interfaces, 2023, 15 (8), pp.11208-11215. ⟨10.1021/acsami.2c18813⟩. ⟨hal-03989809⟩
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