Stacking-dependent exciton multiplicity in WSe 2 bilayers - Archive ouverte HAL
Article Dans Une Revue Physical Review B Année : 2022

Stacking-dependent exciton multiplicity in WSe 2 bilayers

Résumé

Twisted layers of atomically thin two-dimensional materials realize a broad range of quantum materials with engineered optical and transport phenomena arising from spin and valley degrees of freedom and strong electron correlations in hybridized interlayer bands. Here, we report on experimental and theoretical studies of WSe2 homobilayers obtained in two stable configurations of 2H (60?? twist) and 3R (0?? twist) stackings by controlled chemical vapor synthesis of high-quality large-area crystals. Using optical absorption and photoluminescence (PL) spectroscopy at cryogenic temperatures, we uncover marked differences in the optical characteristics of 2H and 3R bilayer WSe2 which we explain on the basis of beyond-density functional theory calculations. Our results highlight the role of layer stacking for the spectral multiplicity of momentum-direct intralayer exciton transitions in absorption and relate the multiplicity of phonon sidebands in the PL to momentum-indirect excitons with different spin valley and layer character. Our comprehensive study generalizes to other layered homobilayer and heterobilayer semiconductor systems and highlights the role of crystal symmetry and stacking for interlayer hybrid states.

Dates et versions

hal-03989058 , version 1 (14-02-2023)

Identifiants

Citer

Zhijie Li, Jonathan Förste, Kenji Watanabe, Takashi Taniguchi, Bernhard Urbaszek, et al.. Stacking-dependent exciton multiplicity in WSe 2 bilayers. Physical Review B, 2022, 106 (4), pp.045411. ⟨10.1103/PhysRevB.106.045411⟩. ⟨hal-03989058⟩
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