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Article Dans Une Revue Thin Solid Films Année : 2005

Pulsed reactive chemical vapor deposition in the C-Ti-Si system from H2/TiCl4/SiCl4

Résumé

A new route was explored to produce Ti3SiC2-based thin coatings on carbonaceous substrates. This method combines low pressure-pulsed chemical vapor deposition (CVD) and reactive CVD, the gaseous phase being a mixture of SiCl4, TiCl4 and H2. It consists in depositing a pyrocarbon film on the substrate, converting C into SiC (or TiCx) and then converting this carbide into Ti3SiC2. Experiments and thermodynamic calculations were performed and compared. The films were investigated by X-ray diffraction and transmission electron microscopy. Several microstructures consisting of various combinaisons of Ti3SiC2, C, SiC, TiCx and TiSi2 were obtained.
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hal-03988790 , version 1 (14-02-2023)

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Sylvain Jacques, H. Di-Murro, M.-P. Berthet, H. Vincent. Pulsed reactive chemical vapor deposition in the C-Ti-Si system from H2/TiCl4/SiCl4. Thin Solid Films, 2005, 478 (1-2), pp.13-20. ⟨10.1016/j.tsf.2004.09.043⟩. ⟨hal-03988790⟩
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