High-Bandwidth Photodiodes on Silicon Nitride Supporting Net Bitrates in Excess of 350 Gbit/s
Résumé
Silicon-nitride-based integrated photonic platforms currently lack fast photodiodes, limiting its adoption for high-speed optical transceivers. We show uni-traveling-carrier (UTC) photodiodes heterogeneously integrated by means of micro-transfer-printing and demonstrate their excellent bandwidth performance at 1550 nm, achieving net bit rates in excess of 350 Gbit/s.