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Communication Dans Un Congrès Année : 2022

High-Bandwidth Photodiodes on Silicon Nitride Supporting Net Bitrates in Excess of 350 Gbit/s

Résumé

Silicon-nitride-based integrated photonic platforms currently lack fast photodiodes, limiting its adoption for high-speed optical transceivers. We show uni-traveling-carrier (UTC) photodiodes heterogeneously integrated by means of micro-transfer-printing and demonstrate their excellent bandwidth performance at 1550 nm, achieving net bit rates in excess of 350 Gbit/s.
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Dates et versions

hal-03960166 , version 1 (27-01-2023)

Identifiants

  • HAL Id : hal-03960166 , version 1

Citer

Dennis Maes, Qian Hu, Robert Borkowski, Yannick Lefevre, Gunther Roelkens, et al.. High-Bandwidth Photodiodes on Silicon Nitride Supporting Net Bitrates in Excess of 350 Gbit/s. European Conference on Optical Communication, ECOC 2022, Sep 2022, Basel, Switzerland. ⟨hal-03960166⟩
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