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Communication Dans Un Congrès Année : 2022

Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices

Résumé

This work presents an innovative technology where GaN-based vertical and lateral devices are monolithically integrated. Indeed, this technology will enable to drive high-power switching devices (vertical GaN power FinFETs) using lateral GaN HEMTs with minimum losses and high stability. The main challenge of this technology is the electrical isolation between these two devices. In this paper, a new isolation approach is presented to avoid any degradation of the lateral transistor performance. In fact, the high voltage applied at the drain of the vertical GaN power FinFET can drastically affect the drain current of the lateral GaN HEMT. To overcome this problem, a highly doped n + GaN layer is inserted between the epi-layers of these two devices. TCAD-Sentaurus simulator is used to validate this new approach. Indeed, this highly n-doped GaN layer is blocking the vertical high electrical field and preventing any depletion of the 2D gas of the lateral GaN HEMT. To the best of our knowledge, it is the first time where the vertical and lateral GaN devices are integrated within the same technology.
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Dates et versions

hal-03946187 , version 1 (19-01-2023)

Identifiants

  • HAL Id : hal-03946187 , version 1

Citer

Zahraa Zaidan, Nedal Al Taradeh, Christophe Rodriguez, Abdelatif Jaouad, Ali Soltani, et al.. Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices. Conférence Euro-méditerranéenne Matériaux, Composants et Systèmes EMCM-DS, Oct 2022, Fes, Morocco. ⟨hal-03946187⟩
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