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Communication Dans Un Congrès Année : 2010

New materials versus new design: study on the physico-chemical and electrical properties of thin SiOxNy layers for their use in RF-MEMS switches

Résumé

In this work we present results from an experimental study on the physico-chemical and electrical properties of thin dielectric layers (SiOxNy) deposited using a plasma assisted process. An application of those dielectric layers in RF-MEMS switches is aimed at. We look for a better understanding of dielectric charging phenomenon as it is known to be the main cause for the failure and low reliability in the actuation of RF-MEMS switches. In order to improve the performance of dielectric layers used in RF-MEMS we have tested a new concept: instead of elaborating new materials we assembled a dielectric multi-layer structure that gains from design rather than from composition. To achieve this we have started with a characterization of the mono-layers deposited singly. The multi-layer structure was found to be a promising candidate for suitable modulation of the conductive properties of the deposited dielectric layers for their use in RF-MEMS switches.
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hal-03942707 , version 1 (18-01-2023)

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  • HAL Id : hal-03942707 , version 1

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Kremena Makasheva, H. Wang, Bernard Despax, Laurent Boudou, F. Coccetti, et al.. New materials versus new design: study on the physico-chemical and electrical properties of thin SiOxNy layers for their use in RF-MEMS switches. MGE'2010: 5e Colloque sur les Matériaux du Génie Electrique, Aug 2010, Montpellier, France. pp.104-109. ⟨hal-03942707⟩
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