New materials versus new design: study on the physico-chemical and electrical properties of thin SiOxNy layers for their use in RF-MEMS switches
Résumé
In this work we present results from an experimental study on the physico-chemical and electrical properties of thin dielectric layers (SiOxNy) deposited using a plasma assisted process. An application of those dielectric layers in RF-MEMS switches is aimed at. We look for a better understanding of dielectric charging phenomenon as it is known to be the main cause for the failure and low reliability in the actuation of RF-MEMS switches. In order to improve the performance of dielectric layers used in RF-MEMS we have tested a new concept: instead of elaborating new materials we assembled a dielectric multi-layer structure that gains from design rather than from composition. To achieve this we have started with a characterization of the mono-layers deposited singly. The multi-layer structure was found to be a promising candidate for suitable modulation of the conductive properties of the deposited dielectric layers for their use in RF-MEMS switches.
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