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Article Dans Une Revue Physical Review Research Année : 2022

Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells

Résumé

Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10-18 meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperatureindependent. Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures.
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Dates et versions

hal-03939599 , version 1 (05-12-2022)
hal-03939599 , version 2 (15-01-2023)

Identifiants

  • HAL Id : hal-03939599 , version 1

Citer

C Avogadri, S Gebert, S S Krishtopenko, I Castillo, C Consejo, et al.. Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells. Physical Review Research, 2022. ⟨hal-03939599v1⟩
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