Optimized ohmic contacts for InAlGaN/GaN HEMTs - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Optimized ohmic contacts for InAlGaN/GaN HEMTs

Résumé

In this work, we have carried out a detailed transmission electron microscopy investigation on ohmic contacts in InAl GaN/GaN high electron mobility transistors consisting of Ti/Al/Ni/Au deposited by evaporation electron beam followed by a rapid thermal annealing at 875°C for 30s under N2 atmosphere. Subsequent to an optimized surface preparation, prior to the metal deposition, it has been possible to systematically obtain a contact resistance of 0.15-0.16 Ω.mm instead of the usual 0.5-0.6 Ω.mm. This is comparable to the state of the art results which have been published subsequent to more complex processes including molecular beam regrowth.
Fichier principal
Vignette du fichier
OhmiContacts PRuteranaAsdam2022.pdf (948.61 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03930667 , version 1 (09-01-2023)

Identifiants

Citer

Pierre Ruterana, Marie Pierre Chauvat, Magali Morales, Farid Medjdoub, Piero Gamarra, et al.. Optimized ohmic contacts for InAlGaN/GaN HEMTs. ASDAM 2022 - 14th International Conference on Advanced Semiconductor Devices and Microsystems, Oct 2022, Smolenice, Slovakia. pp.1-8, ⟨10.1109/ASDAM55965.2022.9966781⟩. ⟨hal-03930667⟩
44 Consultations
117 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More