Article Dans Une Revue Coatings Année : 2022

Tunable Electrical Properties of Ti-B-N Thin Films Sputter-Deposited by the Reactive Gas Pulsing Process

Résumé

Titanium-boron-nitrogen (Ti-B-N) thin films were deposited by RF reactive magnetron sputtering using a titanium diboride (TiB2) target in an argon + nitrogen mixture. The argon mass flow rate was kept constant, whereas that of nitrogen was pulsed during the deposition. A constant pulsing period of P = 10 s was used, and the introduction time of the nitrogen gas (duty cycle (dc)) was systematically varied from dc = 0 to 100% of the pulsing period. This reactive gas pulsing process allowed the deposition of Ti-B-N thin films with various boron and nitrogen concentrations. Such adjustable concentrations in the films also led to changes in their electronic transport properties. Boron and nitrogen contents exhibited a reverse evolution as a function of the nitrogen duty cycle, which was correlated with the transition from a metallic to semiconducting-like behavior. A percolation model was applied to the electrical conductivity as a function of the nitrogen pulsing parameters, assuming some correlations with the evolution of the Ti-B-N thin film nanostructure

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hal-03891101 , version 1 (09-12-2022)

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Charalampos Sakkas, Jean-Marc Cote, Joseph Gavoille, Jean-Yves Rauch, Pierre-Henri Cornuault, et al.. Tunable Electrical Properties of Ti-B-N Thin Films Sputter-Deposited by the Reactive Gas Pulsing Process. Coatings, 2022, 12 (11), pp.1711 (14). ⟨10.3390/coatings12111711⟩. ⟨hal-03891101⟩
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