Research and development in ultimate reliable nano-characterization techniques, down to the nanoscale, are increasingly challenging for the interdisciplinary field of nanotechnologies (microelectronics, metallurgy, biology, etc), for improving products performance, quality and reliability. The latest generation of Orsay Physics workstations combining a gallium Focused Ion Beam (FIB) with a Scanning Electron Microscope (SEM) reach a lateral ion beam resolution of 2.5nm, which simultaneously allow for nanoscale patterning, implantation, TEM lamella preparation, cross sectioning and tomography by FIB slicing. In addition to conventional imaging, the combination of high-resolution SIMS analysis with high resolution chemical imaging with efficient detection of light elements and reliable separation of isotopes, provides a unique multiscale approach essential in materials science. In this study we report the benefits offered by a correlative approach combining multiple analytical and imaging tools (EDX, O-TOF SIMS, SEM and FIB) into the same versatile and customizable UHV “NanoSpace” platform. Chemical mapping with a high spatial resolution (<30nm) and a high mass resolution (FWHM 4500 on 28Si) was made possible by pulsing the secondary ion beam instead of the primary one, as done in conventional TOF-SIMS. Transmission and mass resolution were increased by redesigning and optimizing the extraction of secondary ions of an O-TOF (from TOFWERK company), and compare to the original system from TOFWERK. Finally, we will show that ultra-small precipitates in a nickel-based superalloy, that were not possible to characterise by EDX, were identified and visualised by the new UHV Nanospace platform. For such applications, the Nanospace appears to be also a very good alternative to Atom Probe Tomography (APT) or EDX in the TEM which both require tedious sample preparation.