Homogeneous CuGaSe$_2$ growth by the CuPRO process with In-Situ AgBr treatment - Archive ouverte HAL
Article Dans Une Revue Thin Solid Films Année : 2022

Homogeneous CuGaSe$_2$ growth by the CuPRO process with In-Situ AgBr treatment

Résumé

Homogeneous CuGaSe$_2$ thin film growth is limited by slow kinetics of formation. A modified growth process was previously developed to address this issue but requires two separate long, high temperature anneals. Here, we demonstrate that a short AgBr treatment can replace this modified growth process. The AgBr works as a transport agent to catalyze CuGaSe$_2$ formation and atomic mobility. This treatment results in large grains with homogeneous composition through the bulk. Solar cells made with this material show better performance.
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Dates et versions

hal-03881033 , version 1 (31-07-2024)

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Elizabeth Palmiotti, Polyxeni Tsoulka, Deewakar Poudel, Sylvain Marsillac, Nicolas Barreau, et al.. Homogeneous CuGaSe$_2$ growth by the CuPRO process with In-Situ AgBr treatment. Thin Solid Films, 2022, 762, pp.139488. ⟨10.1016/j.tsf.2022.139488⟩. ⟨hal-03881033⟩
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