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Article Dans Une Revue Optics and Laser Technology Année : 2022

Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications

Résumé

Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (1 00) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray diffraction (HR-XRD) study that the dislocation density in the InxGa1-xAs epitaxial layer significantly increased, and the surface quality deteriorated remarkably. Photoreflectance (PR) spectra show the presence of Franz-Keldysh Oscillations (FKOs) features above the InxGa1-xAs energy bandgap. The strain-induced electric field is then estimated directly from the FKOs periods. Temperature-dependent photoluminescence (TDPL) measurements from 10 K to 300 K showed carrier locations (S-shape). This abnormal behavior is due to the dislocation density associated with fluctuations in the indium concentration. A quasi-stationary rate equation model for the temperature-dependent luminescence spectra of the localized state material system is proposed to interpret the band gap emission process quantitatively. Low-temperature (10 K) time-resolved PL measurements show the increase of lifetime with increasing the indium concentration. Yet, the addition of only 1.7% of indium concentration results in a strong enhancement of PL lifetime by ~ 80%.& nbsp;All these results reveal a more precise picture of the localization and recombination mechanisms of photo-generated carriers in the InGaAs layer, which could be the crucial factors in controlling the performance of high indium content InGaAs SWIR detector.
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hal-03878260 , version 1 (08-01-2024)

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Paternité - Pas d'utilisation commerciale

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Smiri Badreddine, R.S. Joshya, Demir Ilkay, Saidi Faouzi, Altuntas Ismail, et al.. Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications. Optics and Laser Technology, 2022, 148, pp.107714. ⟨10.1016/j.optlastec.2021.107714⟩. ⟨hal-03878260⟩
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