Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT
Charles Pitaval
(1, 2, 3)
,
Cédric Lacam
(1)
,
N. Defrance
(2, 3)
,
Christophe Gaquière
(2, 3)
,
Nicolas Michel
(1)
,
Olivier Parillaud
(4, 1)
,
Sylvain Delage
(1)
Charles Pitaval
Connectez-vous pour contacter l'auteur
- Fonction : Auteur correspondant
- PersonId : 1225395
Connectez-vous pour contacter l'auteur
N. Defrance
- Fonction : Auteur
- PersonId : 747240
- IdHAL : nicolas-defrance
- ORCID : 0000-0002-3944-9652
Christophe Gaquière
- Fonction : Auteur
- PersonId : 746853
- IdHAL : christophe-gaquiere
- ORCID : 0000-0003-3082-2489
- IdRef : 059765615
Résumé
The quaternary barrier InAlGaN is suitable for GaN HEMT power microwave applications. High doping of semiconductor under the drain and source is a known suitable solution to achieve low ohmic contact resistance. However, InAlGaN quaternary alloys require low thermal budget to avoid indium desorption from the active layer during regrowth and thus deteriorating the barrier. This article presents a selective area growth technique at 850 °C by MOVPE to achieve low contact resistance with respect of temperature constraint. Regrowth temperature and mask geometry were investigated to achieve selectivity and control of the regrowth rate. The use of H2 as carrier gas decomposes the GaN buffer layer and damages the surface creating material cluster during regrowth. Growth with N2 carrier gas shows non-selective epitaxy, as there are deposits on the entire surface of the dielectric mask. Switching from one carrier gas to another depending on the step in the MOVPE reactor helps to control both the morphology and selectivity. The resulting high doping levels of 8 × 1019 cm-3 leads to a low contact resistance of 0.26 Ω.mm.
Format du dépôt | Notice |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT
|
Résumé |
en
The quaternary barrier InAlGaN is suitable for GaN HEMT power microwave applications. High doping of semiconductor under the drain and source is a known suitable solution to achieve low ohmic contact resistance. However, InAlGaN quaternary alloys require low thermal budget to avoid indium desorption from the active layer during regrowth and thus deteriorating the barrier. This article presents a selective area growth technique at 850 °C by MOVPE to achieve low contact resistance with respect of temperature constraint. Regrowth temperature and mask geometry were investigated to achieve selectivity and control of the regrowth rate. The use of H2 as carrier gas decomposes the GaN buffer layer and damages the surface creating material cluster during regrowth. Growth with N2 carrier gas shows non-selective epitaxy, as there are deposits on the entire surface of the dielectric mask. Switching from one carrier gas to another depending on the step in the MOVPE reactor helps to control both the morphology and selectivity. The resulting high doping levels of 8 × 1019 cm-3 leads to a low contact resistance of 0.26 Ω.mm.
|
Auteur(s) |
Charles Pitaval
1, 2, 3
, Cédric Lacam
1
, N. Defrance
2, 3
, Christophe Gaquière
2, 3
, Nicolas Michel
1
, Olivier Parillaud
4, 1
, Sylvain Delage
1
1
III-V Lab -
Alcatel-Thales III-V Lab
( 235989 )
- Domaine de Corbeville, 91404 Orsay
- France
2
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
3
PUISSANCE - IEMN -
Puissance - IEMN
( 1067481 )
- Groupe Puissance - (Microwave Power Devices group) - IEMN UMR8520
- France
4
TRT -
Thales Research and Technologies [Orsay]
( 6365 )
- Domaine de Corbeville, 91404 Orsay CEDEX ,France
- France
|
Langue du document |
Anglais
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Date de publication électronique |
2022
|
Date de publication |
2023-08
|
Volume |
220
|
Numéro |
16
|
Page/Identifiant |
2200476
|
Nom de la revue |
|
Financement |
|
Référence interne |
|
Domaine(s) |
|
Mots-clés |
en
GaN, HEMT, ohmic contacts, Regrowth, Millimeter-wave
|
DOI | 10.1002/pssa.202200476 |
Loading...