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Article Dans Une Revue Advanced Optical Materials Année : 2022

Photovoltaic‐ferroelectric materials for the realization of all‐optical devices

Résumé

Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as a photonic transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.
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Dates et versions

hal-03875456 , version 1 (28-11-2022)

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Anatolii Makhort, Roman Gumeniuk, Jean‐françois Dayen, Peter Dunne, Ulrich Burkhardt, et al.. Photovoltaic‐ferroelectric materials for the realization of all‐optical devices. Advanced Optical Materials, 2022, 10, pp.2102353. ⟨10.1002/adom.202102353⟩. ⟨hal-03875456⟩
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