Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V / c-Si tandem solar cells - Archive ouverte HAL Access content directly
Journal Articles Solar Energy Materials and Solar Cells Year : 2022

Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V / c-Si tandem solar cells

Nicolas Vaissiere
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hal-03861478 , version 1 (19-11-2022)

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Monalisa Ghosh, Pavel Bulkin, François Silva, Erik JOHNSON, Ileana Florea, et al.. Ultrathin Ge epilayers on Si produced by low-temperature PECVD acting as virtual substrates for III-V / c-Si tandem solar cells. Solar Energy Materials and Solar Cells, 2022, 236, pp.111535. ⟨10.1016/j.solmat.2021.111535⟩. ⟨hal-03861478⟩
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