Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT - Archive ouverte HAL
Communication Dans Un Congrès Année : 2022

Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT

Mihai Lazar
Marcin Zielinski
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Résumé

In this article, a high power 4H-SiC NPN BJT is demonstrated with a blocking voltage greater than 10 kV when its theoretical value is around 13 kV. The device design was extracted from a previous reported model and a fabrication process with eleven mask levels was performed. The maximum recorded common-emitter current gain is 20 at a current density 178 A/cm 2 .

Domaines

Electronique
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Dates et versions

hal-03856578 , version 1 (28-11-2022)

Identifiants

Citer

Ali Ammar, Mihai Lazar, Bertrand Vergne, Sigo Scharnholz, Luong Viêt Phung, et al.. Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT. 2022 International Semiconductor Conference (CAS 2022), Oct 2022, Poiana Brasov, Romania. pp.191-194, ⟨10.1109/CAS56377.2022.9934390⟩. ⟨hal-03856578⟩
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