S-Parameter Measurement and EM Simulation of Electronic Devices towards THz frequency range
Résumé
In this paper, we present on-wafer S-parameter measurement of silicon-based devices up to 500 GHz and EM simulation analysis up to 750GHz. The EM simulation is carried out with RF probe models and without RF probe model (intrinsic EM simulation) up to 750 GHz. To understand difference between EM simulation predictions with and without RF probe model in frequency range 500-750 GHz, electric field distributions in the DUTs are analysed.
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Copyright (Tous droits réservés)
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