Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-raman thermometers
C. Gaquiere
- Fonction : Auteur
- PersonId : 746853
- IdHAL : christophe-gaquiere
- ORCID : 0000-0003-3082-2489
- IdRef : 059765615
B. Boudart
- Fonction : Auteur
- PersonId : 16148
- IdHAL : bertrand-boudart
- IdRef : 060260092
Résumé
Thermal characterization of GaN-based components is an important and challenging issue that requires the measurement of the self-heating temperature of the channel, the metal contact surface and the substrate with high accuracy. This paper points out that all these thermal parameters can be measured by combining confocal Raman spectroscopy and micro-Raman thermometers. To prove these assertions, thermal resistance and Thermal Boundary Resistance (TBR) were accurately estimated experimentally. In addition, temperature measurements with TiO2 and CeO2 micro-Raman thermometers were carried out to determine which is more accurate and reliable in measuring the surface self-heating temperature of these components.
Domaines
Sciences de l'ingénieur [physics]Format du dépôt | Notice |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-raman thermometers
|
Résumé |
en
Thermal characterization of GaN-based components is an important and challenging issue that requires the measurement of the self-heating temperature of the channel, the metal contact surface and the substrate with high accuracy. This paper points out that all these thermal parameters can be measured by combining confocal Raman spectroscopy and micro-Raman thermometers. To prove these assertions, thermal resistance and Thermal Boundary Resistance (TBR) were accurately estimated experimentally. In addition, temperature measurements with TiO2 and CeO2 micro-Raman thermometers were carried out to determine which is more accurate and reliable in measuring the surface self-heating temperature of these components.
|
Auteur(s) |
R. Strenaer
1
, Y. Guhel
1
, G. Brocero
1
, C. Gaquiere
2, 3
, B. Boudart
1
1
Equipe Electronique - Laboratoire GREYC - UMR6072
( 406687 )
- France
2
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
3
PUISSANCE - IEMN -
Puissance - IEMN
( 1067481 )
- Groupe Puissance - (Microwave Power Devices group) - IEMN UMR8520
- France
|
Nom de la revue |
|
Langue du document |
Anglais
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Date de publication |
2022-11
|
Volume |
138
|
Page/Identifiant |
114693
|
Date de publication électronique |
2022-09-25
|
Référence interne |
|
Domaine(s) |
|
Financement |
|
Mots-clés |
en
GaN-based devices, Thermal characterization, Raman spectroscopy, Self-heating temperature, micro-Raman thermometers
|
DOI | 10.1016/j.microrel.2022.114693 |
Loading...