Journal Articles Nature Communications Year : 2022

Current-induced self-switching of perpendicular magnetization in CoPt single layer

Abstract

Abstract All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of Co x Pt 100- x single layers within a special composition range (20 < x < 56) can be deterministically switched by electrical current in the absence of external magnetic field. Specifically, the Co 30 Pt 70 shows the largest out-of-plane effective field efficiency and best switching performance. We demonstrate that this unique property arises from the cooperation of two structural mechanisms: the low crystal symmetry property at the Co platelet/Pt interfaces and the composition gradient along the thickness direction. Compared with that in bilayers or trilayers, the field-free switching in Co x Pt 100- x single layer greatly simplifies the SOT structure and avoids additional asymmetric designs.
Fichier principal
Vignette du fichier
Manuscript_revised-NatCom.pdf (1) Télécharger le fichier
Origin Files produced by the author(s)

Dates and versions

hal-03836465 , version 1 (02-11-2022)

Identifiers

Cite

Liang Liu, Chenghang Zhou, Tieyang Zhao, Bingqing Yao, Jing Zhou, et al.. Current-induced self-switching of perpendicular magnetization in CoPt single layer. Nature Communications, 2022, 13 (1), pp.3539. ⟨10.1038/s41467-022-31167-w⟩. ⟨hal-03836465⟩
34 View
121 Download

Altmetric

Share

More