Traveling wave photomixers based on low-temperature-grown Gallium Arsenide reaching 50 mA/W under 1550 nm CW illumination - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Traveling wave photomixers based on low-temperature-grown Gallium Arsenide reaching 50 mA/W under 1550 nm CW illumination

Résumé

In this work we present an original design of a traveling-wave photomixer (TWP) based on low-temperature-grown GaAs layer (LT-GaAs) optimized for 1550 nm wavelength excitation. The optical wave is absorbed in the LT-GaAs through an integrated silicon nitride-based waveguide. The optical waveguide is centered between two metallic contacts that serves as biasing electrodes and metallic strips of a THz coplanar waveguide. The device exhibited dc photoresponses as high as 50 mA/W.
Fichier non déposé

Dates et versions

hal-03835235 , version 1 (31-10-2022)

Identifiants

Citer

Charbel Tannoury, Vanessa Avramovic, Etienne Okada, Christophe Coinon, Jean-Francois Lampin, et al.. Traveling wave photomixers based on low-temperature-grown Gallium Arsenide reaching 50 mA/W under 1550 nm CW illumination. 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2022, Delft, Netherlands. pp.1-2, ⟨10.1109/IRMMW-THz50927.2022.9895804⟩. ⟨hal-03835235⟩
29 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More