Design Method of a High Frequency GaN-based Half-Bridge with Bottom-Side Cooled Transistors Using Multi-PCB Assembly
Résumé
This paper proposes a Multi-PCB (M-PCB) design of a half-bridge using bottom-side cooled GaN transistors with optimal layout and thermal management. The fabrication process only requires limited technological capabilities and is well-suited for industrial applications. Electrical and thermal performances are evaluated by measurements and simulation and compared with previous works.
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