[Invited] Process challenges and perspectives of vertical GaN power transistors on foreign substrates
Résumé
Despite considerable progress in their process technology during the last years, vertical GaN power transistors are currently not finding market entry due to the small size and high cost of native GaN substrates. This issue can in principle be circumvented by using heteroepitaxial GaN on more affordable substrates. Recently, first demonstrations of vertical diodes [1] and transistors [2] for GaN-on-silicon have been published where vertical current flow was enabled by backside removal of the silicon substrate and the isolating buffer layers.
Domaines
Sciences de l'ingénieur [physics]| Origine | Fichiers produits par l'(les) auteur(s) |
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