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Communication Dans Un Congrès Année : 2022

[Invited] Process challenges and perspectives of vertical GaN power transistors on foreign substrates

Résumé

Despite considerable progress in their process technology during the last years, vertical GaN power transistors are currently not finding market entry due to the small size and high cost of native GaN substrates. This issue can in principle be circumvented by using heteroepitaxial GaN on more affordable substrates. Recently, first demonstrations of vertical diodes [1] and transistors [2] for GaN-on-silicon have been published where vertical current flow was enabled by backside removal of the silicon substrate and the isolating buffer layers.
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Dates et versions

hal-03829109 , version 1 (25-10-2022)

Identifiants

  • HAL Id : hal-03829109 , version 1

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Christian Huber, S. Regensburger, E. Bahat-Treidel, F Medjdoub, Jens Baringhaus. [Invited] Process challenges and perspectives of vertical GaN power transistors on foreign substrates. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829109⟩
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