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AlGaN channel high electron mobility transistors on bulk AlN substrate

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hal-03829060 , version 1 (25-10-2022)

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  • HAL Id : hal-03829060 , version 1

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Jash Mehta, Idriss Abid, Reda Elwaradi, Yvon Cordier, F Medjdoub. AlGaN channel high electron mobility transistors on bulk AlN substrate. International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829060⟩
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