[Invited] Local substrate removal for next generation GaN-on-Silicon power transistors - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Dates et versions

hal-03828927 , version 1 (25-10-2022)

Identifiants

  • HAL Id : hal-03828927 , version 1

Citer

Youssef Hamdaoui, Idriss Abid, Katir Ziouche, F Medjdoub. [Invited] Local substrate removal for next generation GaN-on-Silicon power transistors. 14th Topical Workshop on Heterostructure Microelectronics (TWHM) 2022, Aug 2022, Hiroshima, Japan. ⟨hal-03828927⟩
25 Consultations
75 Téléchargements

Partager

Gmail Facebook X LinkedIn More