GaN-based devices for both high efficiency switching and RF applications in modern power electronics are increasingly moving into the focus of worldwide research and development activities. Due to their unique material properties GaN power devices are distinguished by featuring a combination of high breakdown voltages, high electron mobility, low on-state resistances and fast switching properties. These devices show promise for both existing as well as emerging applications. Various device concepts to address the specific needs of each of these areas are under intensive development by groups around the world. This tutorial will provide an overview of the material properties, device structures, and fabrication processing issues surrounding this emerging device technology. It will especially discuss technological ways towards engineering higher performances. Speaker: Farid Medjdoub Bio: Farid Medjdoub is a CNRS senior scientist and leads a research team WIND focused on wide bandgap material and devices at IEMN in France. He received his Ph.D. in Electrical engineering from the University of Lille in 2004. Then, he moved to the University of Ulm in Germany as a research associate before joining IMEC as a senior scientist in 2008. Multiple state-of-the-art results have been realized in the frame of his work. Among others, world record thermal stability up to 1000°C for a field effect transistor, best combination of cutoff frequency / breakdown voltage or highest lateral GaNon-silicon breakdown voltage using a local substrate removal have been achieved. His research interests are the design, fabrication, characterization and simulation of innovative wide bandgap devices. He is author and co-author of more than 200 papers in this field. He holds several patents deriving from his research. He serves as an Editor for Superlattices and Microstructures journal. Starting from 2019, he is leading the Nitride power activities within the French national network called GaNexT.