Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate
Résumé
The rapidly increasing power demand, downsizing of power electronics and material specific performance limitation of silicon has led to the development of AlGaN/GaN heterostructures for high power applications. In this frame, emerging AlxGa1-xN channel based heterostructures show promising features for next generation of power electronics. In this work, we propose the study of breakdown field variation through the AlGaN channel HEMTs-on-Silicon with various Al composition. The fabricated devices exhibited remarkable buffer breakdown field > 2.5 MV/cm for sub-micron heterostructures grown on silicon substrate. Furthermore, we also experimentally demonstrate that Al-rich AlGaN channel enable both boosting the 3-terminal transistor breakdown voltage and also benefiting from a superior thermal stability.
Domaines
Sciences de l'ingénieur [physics]| Origine | Fichiers produits par l'(les) auteur(s) |
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