GaAs Schottky Diodes Development for Millimeter Wave Doubler
Résumé
We report the fabrication of GaAs Schottky diodes to be integrated in a 75/150 frequency doubler device. It is a collaborative work between IEMN and LERMA relied on the development of a process with optimizing several technological steps. As a result, very highquality GaAs Schottky diodes have been fabricated with a reverse breakdown voltage as high as 15.2 V at about 15 kA.cm-² current density and an ideality factor of 1.1. These results enabled to consider the design and simulation of a millimeter-wave frequency doubler with estimated efficiency and output power up to 30% and 120mW at 150 GHz, respectively.
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WOCSDICE2021_Hugo_Bouillaud_extended_abstract_v2.pdf (264.77 Ko)
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