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Article Dans Une Revue Nanoscale Année : 2022

Wafer-sized WS2 monolayer deposition by sputtering

Reinier Oropesa-Nuñez
Fredrik O L Johansson
Rebecka Lindblad
Andreas Lindblad

Résumé

We demonstrate that tungsten disulphide (WS 2) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO 2 /Si, Si, and Al 2 O 3 by pulsed direct current-sputtering. The presence of high quality monolayer and multilayered WS 2 on the substrates is confirmed by Raman spectroscopy since the peak separations between the A 1g-E 2g and A 1g-2LA vibration modes exhibit a gradual increase depending on the number of layers. X-ray diffraction confirms a textured (001) growth of WS 2 films. The surface roughness measured with atomic force microscopy is between 1.5 and 3 Å for the ML films. The chemical composition WS x (x = 2.03 ± 0.05) was determined from X-ray Photoelectron Spectroscopy. Transmission electron microscopy was performed on a multilayer film to show the 2D layered structure. A unique method for growing 2D layers directly by sputtering opens up the way for designing 2D materials and batch production of high-uniformity and high-quality (stochiometric, large grain sizes, flatness) WS 2 films, which will advance their practical applications in various fields.
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Dates et versions

hal-03826871 , version 1 (24-10-2022)

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Michelle Marie S Villamayor, Sajid Husain, Reinier Oropesa-Nuñez, Fredrik O L Johansson, Rebecka Lindblad, et al.. Wafer-sized WS2 monolayer deposition by sputtering. Nanoscale, 2022, 14 (17), pp.6331 - 6338. ⟨10.1039/d1nr08375a⟩. ⟨hal-03826871⟩
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