Films deposited on glass substrate by RF sputtering, were heat treated in air by a low power laser spot thanks to conventional photolithography machine, to obtain pure CuCr 0.97 Mg 0.03 O 2 delafossite with an optical transmittance of 0.58 and a conductivity of 5.8S.cm − 1. The Haacke's figure of merit is improved to reach 2.07 × 10-7 Ω − 1. Laser annealing by a photolithography machine is thus very interesting for enhancing the p-type transparent conductor properties of such delafossite phases. A local annealing according to selected patterns could also be envisaged, opening up exciting prospects for fast and low cost making the most of these transparent ptype semiconductors.